FDS6675BZ
产品详情
型号：FDS6675BZ
制造商: onsemi
产品种类: MOSFET
技术: Si
安装风格: SMD/SMT
封装 / 箱体: SOIC-8
晶体管极性: P-Channel
通道数量: 1 Channel
Vds-漏源极击穿电压: 30 V
Id-连续漏极电流: 11 A
Rds On-漏源导通电阻: 10.8 mOhms
Vgs - 栅极-源极电压: - 25 V, + 25 V
Vgs th-栅源极阈值电压: 3 V
Qg-栅极电荷: 62 nC
最小工作温度: - 55 C
最大工作温度: + 150 C
Pd-功率耗散: 2.5 W
通道模式: Enhancement
商标名: PowerTrench
系列: FDS6675BZ
封装: Reel
封装: Cut Tape
封装: MouseReel
商标: onsemi / Fairchild
配置: Single
下降时间: 60 ns
正向跨导 - 最小值: 34 S
高度: 1.75 mm
长度: 4.9 mm
产品类型: MOSFET
上升时间: 7.8 ns
工厂包装数量：2500
子类别: MOSFETs
晶体管类型: 1 P-Channel
类型: MOSFET
典型关闭延迟时间: 120 ns
典型接通延迟时间: 3 ns
-------------------------------
Part number:FDS6675BZ
Manufacturer: onsemi
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package/Case: SOIC-8
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 11 A
Rds On - Drain-Source Resistance: 10.8 mOhms
Vgs - Gate-Source Voltage: - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 62 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 2.5 W
Channel Mode: Enhancement
Tradename: PowerTrench
Series: FDS6675BZ
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: onsemi / Fairchild
Configuration: Single
Fall Time: 60 ns
Forward Transconductance - Min: 34 S
Height: 1.75 mm
Length: 4.9 mm
Product Type: MOSFET
Rise Time: 7.8 ns
Factory Pack Quantity:2500
Subcategory: MOSFETs
Transistor Type: 1 P-Channel
Type: MOSFET
Typical Turn-Off Delay Time: 120 ns
Typical Turn-On Delay Time: 3 ns
Width: 3.9 mm
Unit Weight: 130 mg
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