SI2302CDS-T1-GE3
Product Detail
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package/Case: SOT-23-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 2.9 A
Rds On - Drain-Source Resistance: 57 mOhms
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage: 850 mV
Qg - Gate Charge: 3.5 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 860 mW
Channel Mode: Enhancement
Tradename: TrenchFET
Series: SI2
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 7 ns
Height: 1.45 mm
Length: 2.9 mm
Product Type: MOSFET
Rise Time: 7 ns
Factory Pack Quantity : 3000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 30 ns
Typical Turn-On Delay Time: 8 ns
Width: 1.6 mm
Part # Aliases: SI2302CDS-T1-BE3 SI2302CDS-GE3
Unit Weight: 8 mg
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